Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al2O3/TiO2/Al2O3 Stacked Dielectric Films for the Application to Energy Storage Devices

Zirconium Oxide Mixed Tantalum Oxide High-K Gate Dielectric Films for Metal-Oxide-Semiconductor (MOS) Devices

Hafnium oxide mixed tantalum oxide (HTO) and Zirconium oxide mixed tantalum oxide (ZTO) layers were deposited on chemically cleaned p-Si substrate using RF magnetron sputtering technique. The oxide/Si stacks were annealed in oxygen for 30 minutes at 400 °C as on initial investigation. Both composition and structural properties were absolutely interesting to move further for electrical measureme...

GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization

In this letter, we have investigated the physical and electrical characteristics of atomic layer deposition of HfO2 on GaAs substrates. X-ray photoelectron spectroscopy XPS analysis revealed no significant reduction of arsenic oxides upon deposition of HfO2 on GaAs using tetrakis dimethyl-amino hafnium Hf NMe2 4 as the metallic precursor. However, XPS confirmed the absence of arsenic oxides at ...

Fabrication of metal-semiconductor nanowire heterojunctions.

Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide–nitride gate dielectrics with nitrided crystalline silicon–dielectric interfaces for application in advanced complementary metal–oxide–semiconductor devices

Aggressive scaling of complementary metal–oxide–semiconductor ~CMOS! devices requires gate dielectrics with an oxide equivalent thickness, tox,eq;1 nm or less by the product introduction year 2012. Direct tunneling presents a significant performance limitation in field-effect transistors ~FETs! with homogeneous oxide gate dielectrics ,1.7 nm. Boron diffusion from p poly-Si gate electrodes in p-...

Physical and electrical characterizations of metal-oxide-semiconductor capacitors